Toshiba to offer powerful GaN FET for X-band
Submit on Tuesday, November 14th, 2006 05:58
Toshiba Corporation announced the development of a gallium nitride (GaN) power field effect transistor (FET) that far surpasses the operating performance of gallium arsenide (GaAs) FETs widely used in microwave solid-state amplifiers for radar and satellite microwave communications in the 8 GHz to 12 GHz X-band frequency range.
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