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Toshiba announces GaN FET with highest power in Ku-band

Submit on Wednesday, October 10th, 2007 04:47

Toshiba Corporation announced that it has developed a gallium nitride (GaN) power field effect transistor (FET) for the Ku-band (12 GHz to 18 GHz) frequency range that achieves an output power of 65.4 W at 14.5 GHz, the highest level of performance yet reported at this frequency band.

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